| PART |
Description |
Maker |
| JANSG2N2907AUBC JANSM2N2906A JANSM2N2906AL JANSM2N |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N7370E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| S13003 |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| S13003AD |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| MMBT2131 MMBT2131T1 |
Bipolar Junction Transistor
|
ON Semiconductor
|
| MMBT2132T306 MMBT2132T3G MMBT2132T3 |
General Purpose Transistors NPN Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S |
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
ROHM
|
| 2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
| P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|
| ZXTC6718MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
| ZXTC6717MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
